VS-VSKT570-18PBF www.vishay.com vishay semiconductors revision: 01-dec-16 1 document number: 93281 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thyristor/thyristor, 570 a (super magn-a-pak power modules) features ? high current capability ? high surge capability ? industrial standard package ? 3000 v rms isolating voltage with non-toxic substrate ? designed and qualified for industrial level ? ul approved file e78996 ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 typical applications ? motor starters ? dc motor controls - ac motor controls ? uninterruptible power supplies ? ? ? electrical specifications product summary i t(av) 570 a type modules - thyr istor, standard package smap circuit two scrs doubler circuit super magn-a-pak major ratings and characteristics symbol characteristics values units i t(av) t c = 74 c 570 a i t(rms) t c = 74 c 895 i tsm 50 hz 17 800 60 hz 18 700 i 2 t 50 hz 1591 ka 2 s 60 hz 1452 i 2 ? t 15 910 ka 2 ? s v rrm range 1800 v t stg range -40 to +135 c t j range -40 to +135 voltage ratings type number voltage code v rrm /v drm , maximum repetitive peak reverse voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm /i drm maximum at t j = t j maximum ma VS-VSKT570-18PBF 18 1800 1900 120
VS-VSKT570-18PBF www.vishay.com vishay semiconductors revision: 01-dec-16 2 document number: 93281 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 on-state conduction parameter symbol test conditions values units maximum average on-state current ? at case temperature i t(av) 180 conduction, half sine wave 570 a 74 c maximum rms on-state current i t(rms) 180 conduction, half sine wave at t c = 74 c 895 a maximum peak, one-cycle, ? non-repetitive on-s tate surge current i tsm, i fsm t = 10 ms no voltage ? reapplied sinusoidal ? half wave, ? initial t j = t j maximum 17.8 ka t = 8.3 ms 18.7 t = 10 ms 100 % v rrm ? reapplied 15.0 t = 8.3 ms 15.7 maximum i 2 t for fusing i 2 t t = 10 ms no voltage ? reapplied 1591 ka 2 s t = 8.3 ms 1452 t = 10 ms 100 % v rrm ? reapplied 1125 t = 8.3 ms 1027 maximum i 2 ? t for fusing i 2 ? t t = 0.1 ms to 10 ms, no voltage reapplied 15 910 ka 2 ? s low level value or threshold voltage v t(to)1 (16.7 % x ? x i t(av) < i < ? x i t(av) ), t j = t j maximum 0.864 v high level value of threshold voltage v t(to)2 (i > ? x i t(av) ), t j = t j maximum 0.97 low level value on-state slope resistance r t1 (16.7 % x ? x i t(av) < i < ? x i t(av) ), t j = t j maximum 0.411 m ? high level value on-state slope resistance r t2 (i > ? x i t(av) ), t j = t j maximum 0.362 maximum on-state voltage drop v tm i pk = 1500 a, t j = 25 c, t p = 10 ms sine pulse 1.50 v maximum holding current i h t j = 25 c, anode supply 12 v resistive load 500 ma maximum latching current i l 1000 switching parameter symbol test conditions values units maximum rate of rise of turned-on current di/dt t j = t j maximum, i tm = 400 a, v drm applied 1000 a/s typical delay time t d gate current 1 a, di g /dt = 1 a/s ? v d = 0.67 % v drm , t j = 25 c 2.0 s typical turn-off time t q i tm = 750 a; t j = t j maximum, di/dt = - 60 a/s, ? v r = 50 v, dv/dt = 20 v/s, gate 0 v 100 ? 200 blocking parameter symbol test conditions values units maximum critical rate of rise ? of off-state voltage dv/dt t j = t j maximum, linear to v d = 80 % v drm 1000 v/s rms insulation voltage v ins t = 1 s 3000 v maximum peak reverse and ? off-state leakage current i rrm , i drm t j = t j maximum, rated v drm /v rrm applied 120 ma
VS-VSKT570-18PBF www.vishay.com vishay semiconductors revision: 01-dec-16 3 document number: 93281 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note ? table shows the increment of thermal resistance r thjc when devices operate at different conduction angles than dc triggering parameter symbol test conditions values units maximum peak gate power p gm t j = t j maximum, t p ? 5 ms 10 w maximum peak average gate power p g(av) t j = t j maximum, f = 50 hz, d % = 50 2.0 maximum peak positi ve gate current +i gm t j = t j maximum, t p ? 5 ms 3.0 a maximum peak positi ve gate voltage +v gm 20 v maximum peak negati ve gate voltage -v gm 5.0 maximum dc gate curren t required to trigger i gt t j = 25 c, v ak 12 v 200 ma dc gate voltage required to trigger v gt 3.0 v dc gate current not to trigger i gd t j = t j maximum 10 ma dc gate voltage not to trigger v gd 0.25 v thermal and mechanical specifications parameter symbol test conditions values units maximum junction operating ? temperature range t j -40 to +135 c maximum storage temperature range t stg -40 to +135 maximum thermal resistance, ? junction to case per junction r thjc dc operation 0.065 k/w maximum thermal resistance, ? case to heatsink per module r thc-hs mounting surface smooth, flat and greased 0.02 mounting torque 10 % smap to heatsink a mounting compound is recommended and the torque should be rechecked after a period of ? 3 hours to allow for the spread of the compound. 6-8 nm busbar to smap 12-15 approximate weight 1500 g case style see dimensions (link at the end of datasheet) super magn-a-pak ? r thjc conduction conduction angle sinusoidal conduction rectangular conduction test conditions units 180 0.009 0.006 t j = t j maximum k/w 120 0.011 0.011 90 0.014 0.015 60 0.021 0.022 30 0.037 0.038
VS-VSKT570-18PBF www.vishay.com vishay semiconductors revision: 01-dec-16 4 document number: 93281 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - current rati ngs characteristics fig. 2 - current rati ngs characteristics fig. 3 - on-state powe r loss characteristics fig. 4 - on-state powe r loss characteristics fig. 5 - maximum non-re petitive surge current fig. 6 - maximum non-re petitive surge current maximum allowable case temperature (c) average on-state current (a) 200 300 600 700 0 140 130 120 110 100 90 80 70 60 50 180 120 90 60 30 conduction angle ? 100 400 500 vskt570-18pbf r thjc = 0.065 k/w maximum allowable case temperature (c) average on-state current (a) 200 300 800 900 0 140 130 120 110 100 90 80 70 60 50 100 400 600 180 120 90 60 30 vskt570-18pbf r thjc = 0.065 k/w ? conduction period 700 500 dc maximum average on-state power loss (w) average on-state current (a) 100 200 300 400 500 600 0 1000 700 400 100 800 500 200 900 600 300 0 180 120 90 60 30 rms limit conduction angle ? vskt570-18pbf t j = 135 c maximum average on-state power loss (w) average on-state current (a) 100 200 300 400 600 900 0 1200 400 800 200 600 0 180 120 90 60 30 rms limit vskt570-18pbf t j = 135 c 1000 500 700 800 dc conduction period ? peak half sine wave on-state current (a) number of equal amplitude half cycle current pulses (n) 10 100 1 16 000 15 000 14 000 13 000 12 000 11 000 10 000 9000 8000 7000 vskt570-18pbf per junction at any rated load condition and with rated v rrm applied following surge. initial t j = 135 c at 60 hz 0.0083 s at 50 hz 0.0100 s peak half s ine wave on- s tate current (a) pulse train duration (s) 0.1 1 0.01 18 000 6000 8000 10 000 12 000 14 000 16 000 maximum non-repetitive s urge current ver s u s pul s e train duration. control of conduction may not be maintained. initial t j = 135 c no voltage reapplied rated v rrm reapplied vskt570-18pbf per junction
VS-VSKT570-18PBF www.vishay.com vishay semiconductors revision: 01-dec-16 5 document number: 93281 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 7 - on-state power loss characteristics fig. 8 - on-state voltage drop characteristics fig. 9 - thermal impedance z thjc characteristics fig. 10 - gate characteristics maximum total on-state power loss (w) total rms output current (a) 100 200 300 400 500 600 900 0 900 600 300 200 100 0 vskt570-18pbf per module t j = 135 c ? ? conduction angle 180 120 90 60 30 700 800 700 800 500 400 maximum total on-state power loss (w) maximum allowable ambient temperature (c) 20 40 60 80 100 120 0 900 800 700 500 500 400 300 200 100 0 r thsa = 0.07 k/w 0.09 k/w 0.2 k/w 0.12 k/w 0.3 k/w 0.4 k/w 0.5 k/w 0.6 k/w instantaneous on- s tate current (a) instantaneous on- s tate voltage (v) 1.0 1.5 2.0 5.0 0.5 10 000 1000 100 2.5 3.0 3.5 4.0 4.5 vskt570-18pbf per junction t j = 25 c t j = 135 c 0.001 0.01 0.1 0.001 0.01 0.1 1 10 s quare wave pulse duration (s) z thjc - transient thermal impe d ance (k/w) 100 s teady s tate value r thjc = 0.065 k/w (dc operation) vskt570-18pbf per junction 0.1 1 10 100 0.001 instantaneous gate current (a) instantaneous gate voltage (v) 0.01 0.1 1 10 100 1000 v gd i gd t j = 40 c t j = 25 c t j = 130 c (b) (a) frequency limited by p g(av) (1) (2) (3) (4) rectangular gate pulse a) recommended load line for rated di/dt: 20 v, 10 ; t r 1 s b) recommended load line for 30 % rated di/dt: 10 v, 10 t r 1 s (1) p gm = 10 w, t p = 4 ms (2) p gm = 20 w, t p = 2 ms (3) p gm = 40 w, t p = 1 ms (4) p gm = 60 w, t p = 0.66 ms vsk.570-18pbf
VS-VSKT570-18PBF www.vishay.com vishay semiconductors revision: 01-dec-16 6 document number: 93281 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table circuit configuration circuit description circuit configuration code circuit drawing two scrs doubler circuit kt links to related documents dimensions www.vishay.com/doc?95283 - circuit configuration (see below) - current rating - voltage code x 100 = v rrm - lead (pb)-free device code kt vs-vs 570 - 18 pbf 2 3 4 5 5 1 3 2 4 - vishay semiconductors product 1 vskt + 6 (g2) - 5 (g1) ~ 1 2 3 7 (k2) 4 (k1)
outline dimensions www.vishay.com vishay semiconductors revision: 14-dec-16 1 document number: 95283 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 super magn-a-pak thyristor/diode dimensions in millimeters (inches) 60.0 (2.36) 48.0 (1.89) 31.0 (1.22) 50.0 (1.97) 44.0 (1.73) 17 (0.67) max. 19 (0.75) m10 fast-on tabs 2.8 x 0.8 (0.11 x 0.03) 17.8 (0.70) 36.4 (1.14) 4.5 (0.20) 54 6 5, 6 = gate 4, 7 = cathode 7 28.0 (1.10) 26.0 (0.98) 26.0 (0.98) 112.0 (4.41) 124.0 (4.88) 149.0 (5.67) 1.0 (0.039) 32 1 ? 6.5 mm 0.3 mm x 4 hole s (typ.) 52 (2.05) 9.9 0.5 (0.39 0.02) 18 (0.71) max. 48 (1.90)
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